Journal Publications


Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

Journal of Physics: Conference Series
Vol.993, 012028, 2018
DOI: https://doi.org/10.1088/1742-6596/993/1/012028

  •  M N Koryazhkina - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  S.V. Tikhov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  A.N. Mikhaylov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  A.I. Belov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  D.S. Korolev - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  I.N. Antonov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  V.V. Karzanov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  O.N. Gorshkov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  D.I. Tetelbaum - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  P. Karakolis - Institute of Nanoscience & Nanotechnology, NCSR “Demokritos”, Agia Paraskevi, Greece

  •  P. Dimitrakis - Institute of Nanoscience & Nanotechnology, NCSR “Demokritos”, Agia Paraskevi, Greece

Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

Advances in Condensed Matter Physics
Vol.2018, Article ID 2028491, 8 pages
https://doi.org/10.1155/2018/2028491

  •  S. Tikhov - Department of Physics, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603 950, Russia

  •  O. Gorshkov - Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave.,Nizhny Novgorod 603 950, Russia

  •  I. Antonov - Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603 950, Russia

  •  A. Morozov - Department of Physics, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603 950, Russia

  •  M. Koryazhkina - Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave.,Nizhny Novgorod 603 950, Russia

  •  D. Filatov - Research and Educational Center for Physics of Solid State Nanostructures, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Microelectronic Engineering
Vol.187-188, p.134-138, 2018
DOI: 10.1016/j.mee.2017.11.002

  •  S.V. Tikhov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  A.N. Mikhaylov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  A.I. Belov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  D.S. Korolev - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  I.N. Antonov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  V.V. Karzanov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  O.N. Gorshkov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  D.I. Tetelbaum - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  P. Karakolis - Institute of Nanoscience & Nanotechnology, NCSR “Demokritos”, Agia Paraskevi, Greece

  •  P. Dimitrakis - Institute of Nanoscience & Nanotechnology, NCSR “Demokritos”, Agia Paraskevi, Greece