Journal Publications


Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Microelectronic Engineering
Vol.187-188, p.134-138, 2018
DOI: 10.1016/j.mee.2017.11.002

  •  S.V. Tikhov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  A.N. Mikhaylov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  A.I. Belov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  D.S. Korolev - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  I.N. Antonov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  V.V. Karzanov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  O.N. Gorshkov - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  D.I. Tetelbaum - Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

  •  P. Karakolis - Institute of Nanoscience & Nanotechnology, NCSR “Demokritos”, Agia Paraskevi, Greece

  •  P. Dimitrakis - Department of Physics, University of Patras, GR 26500 Patras, Greece